sm5013 series nippon precision circuits? nippon precision circuits inc. quartz crystal oscillator ic overview the sm5013 series crystal oscillator module ics fabricated in npc s molybdenum-gate cmos. they comprise low-voltage low-current consumption oscillator circuits and output buffers. they incorpo- rate built-in oscillation capacitance with superior fre- quency response to realize. features n 4.5 to 5.5 v supply voltage n oscillation capacitances built-in (c g and c d ) n output drive capability : 8 ma (v dd = 4.5v) n output duty level sm5013kdh : cmos sm5013ldh : ttl n 3rd overtone oscillation n output frequency : fo (oscillation frequency) n input level : ttl n 3 state function n 6 pin sot (sm5013 dh) n chip form (cf5013 d) ordering infomation device package sm5013 dh 6pinsot cf5013 d chip form
sm5013 series nippon precision circuits? pad dimensions ( unit : m m ) pad coordinates chip size : 1.00 0.80mm chip thickness : 250 30 m m chip reverse side : v dd level pin out ( top view ) pin descriptions pad coordinate( m m) xy vss 150 174 xt 570 170 inh 850 150 vdd 850 450 xt 850 650 q 150 650 q xt (1000,800) vdd inh xt vss (0,0) x y pin description xt oscillator input pin xt oscillator output pin inh output state control input pin ( with built-in pull-up resistance vdd supply voltage vss ground q output pin ( fo : oscillator frequency) 1 inh 2 xt vss 4q 5 vdd 6xt 3 3
sm5013 series nippon precision circuits? package dimensions (unit : mm) 6pin sot block diagram 2.9 0.2 0.95 0.40 0.1 1.60 1.1 0.1 + 0.2 - 0.1 2.8 + 0.2 - 0.3 0.45 0 to 0.15 1.9 0.2 0.15 + 0.1 - 0.05 xt xt inh vss vdd q c g c d
sm5013 series nippon precision circuits? device list note that the operating frequency is highly dependent on the frequency of the crystal used. current consumption and output waveform with npc s standard crystal device target frequency range (mhz) gm (relative value) output (stand by) internal capacitance c g (pf) c d (pf) cf5013kd 22 to 70 cmos hi - z 8 15 CF5013LD 22 to 70 ttl hi - z 8 15 f (mhz) r ( w ) l (mh) ca (ff) cb (pf) 30 18.62 16.24 1.733 5.337 40 20.53 11.34 1.396 3.989 50 22.17 7.40 1.370 4.105 60 22.20 5.05 1.388 4.226 70 25.42 4.18 1.254 5.170 l ca r cb
sm5013 series nippon precision circuits? specifications absolute maximum ratings v ss = 0v, unless otherwise noted. recommended operating conditions v ss = 0v, unless otherwise noted. electrical characteristics v dd = 4.5 to 5.5v, v ss = 0v, ta = - 20 to 80 c, unless otherwise noted. parameter symbol condition rating unit supply voltage range v dd - 0.5 to + 7.0 v input voltage range v in - 0.5 to v dd + 0.5 v output voltage range v out - 0.5 to v dd + 0.5 v operating temperature range t opr - 40 to + 85 c standard temperature range t stg sot6 - 55 to + 125 c chip form - 65 to + 150 c output current i out 13 ma power dissipation p w sot6 250 mw soldering temperature t sld sot6 255 c soldering time t sld sot6 10 s parameter symbol condition limit unit min typ max supply voltage v dd 4.5 - 5.5 v input voltage v in v ss - v dd v operating temperature t opr - 20 -+ 80 c parameter symbol condition limit unit min typ max high - level output voltage v oh q pin, test circuit 1, v dd = 4.5v, i oh = 8ma 3.9 4.2 - v low - level output voltage v ol q pin, test circuit 2, v dd = 4.5v, i ol = 8ma - 0.3 0.4 v output leakage current i z q pin, test circuit 2, inh = low, v dd = 5.5v v oh = v dd -- 10 m a v ol = v ss -- 10 m a high - level input voltage v ih inh pin 2.0 -- v low - level input voltage v il inh pin -- 0.8 v current consumption i dd inh = open, test circuit 3, c l = 15pf, f = 70mhz cf5013kd, load circuit 1 - 28 45 ma CF5013LD, load circuit 2 - 28 45 ma pull - up resistance r up inh pin, test circuit 4 25 100 250 k w internal capacitance c g design value, determined by the internal wafer pattern 7.2 8 8.8 pf c d 13.5 15 16.5 pf
sm5013 series nippon precision circuits? switching characteristics cf5013kd (duty level cmos ) v dd = 4.5 to 5.5v, v ss = 0v, ta = - 20 to 80 c, unless otherwise noted. CF5013LD (duty level ttl ) v dd = 4.5 to 5.5v, v ss = 0v, ta = - 20 to 80 c, unless otherwise noted. functional description stand - by function when inh pin is low-level, q pin will be high-impedance. parameter symbol condition limit unit min typ max output rise time t r test circuit 5, load circuit 1, c l = 15pf, 0.1v dd ? 0.9v dd - 3.5 7 ns output fall time t f test circuit 5, load circuit 1, c l = 15pf, 0.9v dd ? 0.1v dd - 3.5 7 ns output duty cycle 1 1. determined by the lot monitor. duty test circuit 5, ta = 25 c, v dd = 5.0v load circuit 1, c l = 15pf, f = 70mhz 45 - 55 % output disable delay time t plz test circuit 5, ta = 25 c, v dd = 5.0v, load circuit 1, c l = 15pf -- 100 ns output enable delay time t pzl -- 100 ns parameter symbol condition limit unit min typ max output rise time t r test circuit 5, load circuit 2, c l = 15pf, 0.4v ? 2.4v - 2.5 7 ns output fall time t f test circuit 5, load circuit 2, c l = 15pf, 2.4v ? 0.4v - 2.5 7 ns output duty cycle 1 1. determined by the lot monitor. duty test circuit 5, ta = 25 c, v dd = 5.0v load circuit 2, c l = 15pf, f = 70mhz 45 - 55 % output disable delay time t plz test circuit 5, ta = 25 c, v dd = 5.0v, load circuit 2, c l = 15pf -- 100 ns output enable delay time t pzl -- 100 ns inh q high(open) output low hi - z
sm5013 series nippon precision circuits? test circuits test circuit 1 3.5 v p - p , 10mhz sine wave input signal test circuit 2 test circuit 3 3.5 v p - p , 70mhz sine wave input signal test circuit 4 test circuit 5 x tal = 70mhz rfo = 2.7k w signal generator vdd vss xt q r1 r2 c1 c1: 0.001 m f r1: 50 w r2: 490 w r3: 100 k w v oh 0v q out monitor xt r3 vdd vss q a v i ol , i z i z v ol inh signal generator vdd vss xt q r1 i dd c1 c1: 0.001 m f r1: 50 w r3: 100 k w a xt r3 vdd vss inh i pr r up = v dd i pr a vdd vss xt xt r fo q x'tal inh
sm5013 series nippon precision circuits? load circuit 1 load circuit 2 q output c l =15pf(including probe capacity) c l q output v dd c l c l =15pf(including proove capacity) r=800 w r
sm5013 series nippon precision circuits? switching time test waveforms (1) sm5013kd (duty level cmos) t r , t f , duty output duty cycle time (2) CF5013LD (duty level ttl) t r , t f , duty output duty cycle time 0.9v dd 0.1v dd 0.9v dd 0.1v dd t r t f q output duty measuring voltage (0.5v dd ) duty measuring voltage ( 0.5v dd ) q output t w t duty= (t w / t) 100 (%) 2.4v 0.4v 2.4v 0.4v t r t f q output duty measuring voltage (1.4v) duty measuring voltage ( 1.4v ) q output t w t duty= (t w / t) 100 (%)
sm5013 series nippon precision circuits?0 nippon precision circuits inc. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. nippon precision circuits inc. assumes no responsib ility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infringement. applications for any devices shown in this data sheet are for illustration only and nippon p recision circuits inc. makes no claim or warranty that such applications will be suitable for the use speci?d without further testing o r modi?ation. the products described in this data sheet are not intended to use for the apparatus which in?ence human lives due to the failu re or malfunction of the products. customers are requested to comply with applicable laws and regulations in effect now and hereinaft er, including compliance with export controls on the distribution or dissemination of the products. customers shall not export, dir ectly or indirectly, any products without ?st obtaining required licenses and approvals from appropriate government agencies. nippon precision circuits inc. 4-3, 2-chome fukuzumi koto-ku, tokyo 135-8430, japan telephone: 03-3642-6661 facsimile: 03-3642-6698 nc9621ce 1998.08 nippon precision circuits inc. output disable/enable delay times q output inh v ih v il t plz t pzl inh inputwaveform t r = t f 10ns
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